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NXP PMV213SN,215 - N-Channel MOSFET (Partial Reel with 2691 pcs)

• Date Code: 13+
• Type: N-Channel TrenchMOS Standard Level FET
• Drain-Source Breakdown Voltage (Vdss): 100 V
• Continuous Drain Current (Id): 1.9 A
• Drain-Source On Resistance (Rds(on)): 250 mΩ
• Gate-Source Voltage (Vgs): ±30 V
• Gate-Source Threshold Voltage (Vgs(th)): 2 V
• Gate Charge (Qg): 7 nC
• Operating Temperature Range: -55 °C to +150 °C
• Power Dissipation (Pd): 2 W
• RoHS Compliance: Yes

SMD in manufacturer packaging

Product comes with a 12-month warranty.

New in original packaging (OVP).

Stock excédentaire inutilisé avec une garantie de durabilité.

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Excedente de inventario no utilizado con garantía de durabilidad.

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Excedente de inventário não utilizado com garantia de durabilidade.

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