IRFD1Z0 INTERSIL N-Channel MOSFET 227pcs

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Product Details

The Intersil IRFD1Z0 is an N-Channel enhancement mode silicon gate power MOSFET in a HEXDIP package, designed for high-speed switching applications. With nanosecond switching speeds, high input impedance, and linear transfer characteristics, it is ideal for use in switching regulators, motor drivers, relay drivers, and bipolar transistor driver stages. It can be driven directly from integrated circuits. In Stock, Ships Within 3 Days.

Product Overview

Manufacturer Intersil (Harris Corporation)
Part Number IRFD1Z0
Transistor Type N-Channel Enhancement Mode Power MOSFET
Drain-to-Source Voltage (VDS) 100V
Continuous Drain Current (ID) 0.5A
Pulsed Drain Current (IDM) 4.0A
Drain-to-Source On-Resistance (rDS(ON)) 2.4Ω max (typ. 2.2Ω) @ VGS = 10V, ID = 0.25A
Gate-to-Source Voltage (VGS) ±20V
Gate Threshold Voltage (VGS(TH)) 2.0V – 4.0V
Maximum Power Dissipation (PD) 1.0W
Turn-On Delay Time (td(ON)) 10ns typ. / 20ns max
Rise Time (tr) 15ns typ. / 25ns max
Turn-Off Delay Time (td(OFF)) 15ns typ. / 25ns max
Fall Time (tf) 10ns typ. / 20ns max
Total Gate Charge (Qg) 2.0nC typ. / 3.0nC max
Input Capacitance (CISS) 50pF typ.
Thermal Resistance (RθJA) 120°C/W
Operating Temperature (TJ) –55°C to +150°C
Package HEXDIP
Quantity 227 pcs 

Applications

  • Switching regulators and switching converters
  • DC motor drivers and relay drivers
  • Driver stages for high-power bipolar switching transistors
  • IC-driven low-gate-power switching circuits
  • High-speed power switching in industrial and consumer electronics

Shipping

  • Ships within 3 business days after payment
  • Secure packaging for safe delivery
  • Free delivery within Germany

Warranty & Compliance

  • 12-month warranty included
  • Product is fully compliant with EU industry standards
  • New in original packaging (OVP)
  • VAT invoice included with every order

Product Safety Information (GPSR (EU) 2023/988): Contact us at info@liquisto.com for Manufacturer/EU Responsible Party product safety contact details.