onsemi MMBZ18VALT1G Dual Monolithic Silicon Zener Diode 1046pcs

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Product Details

ONSEMI MMBZ18VALT1G Dual Monolithic Silicon Zener Diode — 18 V nominal breakdown, 40 W peak power, dual common anode SOT-23 package. Partial reel of 1046 pieces. Designed for transient overvoltage and ESD protection of two separate signal lines using a single compact package, ideal for computers, communication systems, printers, and other ESD-sensitive equipment.

Available in stock — ships within 3 days after payment.

Product overview

Part number MMBZ18VALT1G
Product type Dual monolithic silicon Zener diode — ESD suppressor
Configuration Dual common anode — unidirectional or bidirectional
Zener voltage (nominal) 18 V
Breakdown voltage range 17.10 V min – 18.90 V max @ IT = 1.0 mA
Working peak reverse voltage (VRWM) 14.5 V
Clamping voltage (VC @ IPP) 25 V
Peak pulse current (IPP) 1.6 A
Peak power dissipation 40 W @ 1.0 ms
Total power dissipation (FR-5 board) 225 mW @ 25°C
Max reverse leakage current 50 nA @ VRWM
ESD rating (HBM) Class 3B (>16 kV)
ESD rating (IEC 61000-4-2) Level 4, ±30 kV contact discharge
Junction & storage temperature −55°C to +150°C
Package SOT-23 (Case 318), surface mount
RoHS compliance Yes — Pb-free
Quantity 1046 pieces (partial reel, 8 mm tape & reel)
Condition New — original packaging (OVP)

Applications

  • Transient overvoltage and ESD protection on two signal lines using a single SOT-23 package
  • Interface protection in computers, printers, keyboards, and business machines
  • Microprocessor bus protection — address, data, and control lines
  • Communication systems and medical equipment requiring ESD-sensitive line protection

Shipping

  • Ships within 3 days after payment
  • Secure packaging for safe delivery
  • Free delivery within Germany

Warranty & compliance

  • 12-month warranty included
  • Product is fully compliant with EU industry standards
  • VAT invoice included with every order

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