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Infineon BSC123N08NS3GATMA1 - MOSFET N-Channel (Reel with 5000 pcs)
Infineon BSC123N08NS3GATMA1 - MOSFET N-Channel (Reel with 5000 pcs)

BSC123N08NS3GATMA1 Infineon MOSFET N-Channel 5000pcs

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€1.700,10 inc. VAT
-48% €3.240,00 €1.700,10 inc. VAT
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Product Details

Infineon BSC123N08NS3 G OptiMOS 3 N-Channel Power MOSFET — 80 V, 55 A, 12.3 mΩ RDS(on), PG-TDSON-8, 5000 pcs/reel, Date Code 2223. Optimised for high-frequency switching and synchronous rectification in DC/DC converters, featuring an excellent gate charge × RDS(on) figure of merit, superior thermal resistance, and 100% avalanche testing.

Available in stock — ships within 3 days after payment.

Product overview

Part number BSC123N08NS3 G (BSC123N08NS3GATMA1)
Date code 2223
Product type OptiMOS 3 N-channel power MOSFET
Package PG-TDSON-8, tape and reel
Quantity 5000 pcs/reel
Drain-source voltage (VDS) 80 V
Continuous drain current (ID) 55 A (TC=25°C) / 35 A (TC=100°C) / 11 A (TA=25°C)
Pulsed drain current 220 A
RDS(on) max. 12.3 mΩ (VGS=10 V) / 24 mΩ (VGS=6 V)
Gate threshold voltage (VGS(th)) 2.0–3.5 V
Gate-source voltage (VGS) ±20 V
Power dissipation (Ptot) 66 W (TC=25°C)
Gate charge total (Qg) 19 nC typ. / 25 nC max.
Output charge (QOSS) 25 nC typ. / 34 nC max.
Avalanche energy (EAS) 70 mJ
Operating temperature -55°C to +150°C
Mounting type SMD / SMT
Avalanche tested Yes — 100%
Compliance RoHS compliant, halogen-free (IEC61249-2-21), Pb-free
Condition New — original sealed packaging (OVP)

Applications

  • High-frequency DC/DC converters and synchronous rectification
  • Point-of-load regulators and server power supplies
  • Motor drives and industrial power conversion
  • Battery management systems and telecom infrastructure

Shipping

  • Ships within 3 days after payment
  • Secure packaging for safe delivery
  • Free delivery within Germany

Warranty & compliance

  • 12-month warranty included
  • Product is fully compliant with EU industry standards
  • VAT invoice included with every order

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