Infineon IRF7807PBF HEXFET® N-Channel Power MOSFET — 30V, 8.3A, 25mΩ RDS(on), SO-8. Advanced HEXFET technology optimised for mobile DC-DC converters, delivering an exceptional balance of low on-resistance and low gate charge for high-efficiency 3.3V and 5V power conversion. Suitable as control FET and synchronous FET in the same design. Tube of 95 pieces in original packaging. Direct substitute for IRF7807TRPBF (tape and reel variant).
Available in stock — ships within 3 days after payment.
Product overview
| Part number | IRF7807PBF |
| Manufacturer | Infineon Technologies (International Rectifier) |
| Quantity | Tube — 95 pcs |
| Device type | N-Channel HEXFET® Power MOSFET |
| Drain-source voltage (VDS) | 30V |
| Continuous drain current (ID) | 8.3A @ 25°C |
| On-state resistance (RDS(on) max) | 25mΩ @ VGS = 4.5V |
| Total gate charge (Qg) | 17nC (max) @ VGS = 5V |
| Power dissipation (PD) | 2.5W @ 25°C |
| Gate-source voltage (VGS) | ±12V |
| Package | SO-8 |
| Substitute for | IRF7807TRPBF (tape and reel variant) |
| Condition | New — original packaging (OVP) |
| Compliance | RoHS compliant (Lead Free) |
Applications
- Mobile DC-DC converters for 3.3V and 5V system rails in laptops and portable devices
- Control FET and synchronous FET in high-efficiency buck converter designs
- Low voltage power conversion in embedded systems and microprocessor power stages
- Battery-powered applications requiring minimal conduction and switching losses
Shipping
- Ships within 3 days after payment
- Secure packaging for safe delivery
- Free delivery within Germany
Warranty & compliance
- 12-month warranty included
- Product is fully compliant with EU industry standards
- VAT invoice included with every order
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