FZT855TA Diodes Incorporated BJT Bipolar Transistor 793pcs

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Regular price €246,75

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Product Details

Diodes Incorporated FZT855TA — 150 V NPN Medium Power Bipolar Transistor, 5 A continuous collector current, VCE(sat) < 110 mV @ 1 A, SOT223, tape & reel (partial reel, 793 pcs). Very low saturation voltage and 50 mΩ equivalent on-resistance make this device well suited to high-side switching, motor control, and linear regulation in space-constrained SMT designs. Complementary PNP type: FZT955.

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Product overview

Part number FZT855TA
Manufacturer Diodes Incorporated
Product type NPN medium power bipolar junction transistor (BJT)
Collector-emitter voltage (VCEO) 150 V
Collector-base voltage (VCBO) 250 V
Continuous collector current (IC) 5 A
Peak pulse current (ICM) 10 A
Saturation voltage VCE(sat) < 110 mV @ IC = 1 A / max 355 mV @ IC = 5 A
On-resistance RCE(sat) 50 mΩ
DC current gain (hFE) 100–300 @ IC = 1 A / min 15 @ IC = 5 A
Gain-bandwidth product (fT) 90 MHz typ @ VCE = 10 V, IC = 100 mA
Power dissipation (PD) 3.0 W (on 52×52 mm FR4, single sided 2oz Cu)
Operating / storage temperature –55°C to +150°C
ESD rating (HBM) ≥ 8,000 V (JEDEC Class 3B)
Complementary type FZT955 (PNP)
Package SOT223 (Type DN)
Moisture sensitivity level (MSL) Level 1 per J-STD-020
Quantity 793 pcs (partial reel)
Condition New — original packaging (OVP)

Applications

  • High-side and low-side switching in DC motor driver circuits
  • Linear voltage regulation and current source designs
  • Load switching in industrial power management systems
  • Solenoid and relay drivers requiring high continuous collector current
  • General-purpose medium power amplification and switching in consumer and industrial electronics

Shipping

  • Ships within 24 hours after payment
  • Secure packaging for safe delivery
  • Free delivery within Germany

Warranty & compliance

  • 12-month warranty included
  • Product is fully compliant with EU industry standards
  • VAT invoice included with every order

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