2N7002DWK Diodes Incorporated Dual N-Channel MOSFET 3000pcs

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Product Details

Diodes Incorporated 2N7002DWK — Dual N-Channel Enhancement Mode MOSFET, 60 V, 261 mA, SOT363, Tape & Reel of 3000 pcs. Designed to minimise on-state resistance while maintaining fast switching performance, making it ideal for high-efficiency power management and motor control applications. Both channels include gate protection diodes for ESD robustness, and the device is fully lead-free, halogen-free, and RoHS compliant.

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Product overview

Part number 2N7002DWK
Date code 21+ (2021 or later)
Manufacturer Diodes Incorporated
Product type Dual N-channel enhancement mode MOSFET
Drain-source voltage (BVDSS) 60 V
Gate-source voltage (VGSS) ±20 V
Continuous drain current (ID) @ TA = +25 °C 261 mA (VGS = 10 V) / 226 mA (VGS = 4.5 V)
Continuous drain current (ID) @ TA = +70 °C 208 mA
Pulsed drain current (IDM) 1.1 A (10 µs pulse, 1 % duty cycle)
Gate threshold voltage (VGS(TH)) 1.0 V min — 2.0 V max
On-resistance RDS(ON) typ / max 1.3 Ω typ / 3.0 Ω max @ VGS = 10 V, ID = 200 mA
1.5 Ω typ / 4.0 Ω max @ VGS = 4.5 V, ID = 150 mA
Zero gate voltage drain current (IDSS) 1 µA max @ VDS = 60 V
Gate-source leakage (IGSS) ±10 µA max @ VGS = ±20 V
Diode forward voltage (VSD) 0.8 V typ / 1.4 V max @ IS = 115 mA
Input capacitance (Ciss) 41 pF typ
Output capacitance (Coss) 4.5 pF typ
Total gate charge (Qg) 0.51 nC typ @ VGS = 4.5 V / 1.04 nC typ @ VGS = 10 V
Turn-on delay / rise time 6.9 ns / 5.8 ns
Turn-off delay / fall time 37.8 ns / 14.3 ns
Total power dissipation (PD) 0.45 W (1 in² copper plate) / 0.33 W (min. pad)
Thermal resistance junction to ambient (RθJA) 278 °C/W (1 in² copper) / 379 °C/W (min. pad)
Operating / storage temperature (TJ, TSTG) −55 °C to +150 °C
ESD protection Gate protection diode on each channel
Moisture sensitivity level Level 1 per J-STD-020
Package SOT363 — 2.15 × 2.10 × 0.95 mm (typ)
Weight 0.006 g (approx.)
Quantity Full reel of 3,000 pcs — tape & reel
Condition New — sealed original reel (OVP)
Compliance RoHS compliant (EU 2002/95/EC, 2011/65/EU, 2015/863/EU); halogen-free; lead-free; "Green" device

Applications

  • High-efficiency power management circuits requiring low on-resistance switching
  • Motor control and driver circuits using both channels independently or in complementary configurations
  • Load switching, signal routing, and logic-level gate drive circuits
  • Portable and battery-powered consumer electronics where low VGS(TH) enables direct MCU drive
  • Space-constrained PCB designs benefiting from the compact SOT363 dual-device footprint

Shipping

  • Ships within 24 hours after payment
  • Secure packaging for safe delivery
  • Free delivery within Germany

Warranty & compliance

  • 12-month warranty included
  • Product is fully compliant with EU industry standards
  • VAT invoice included with every order

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